P1_1_Delta Doping Limitations in Example Semiconductor GaAs_V2
Abstract
Abstract. In this paper, a limit for the application of the use of the Dirac delta function as an approximation for the doping profile of very thin semiconductor dopant layers is deduced.
Published
04-09-2009
How to Cite
Feeley, M., Benson, L., & Nguyen, M. H. (2009). P1_1_Delta Doping Limitations in Example Semiconductor GaAs_V2. Physics Special Topics, 7(2). Retrieved from https://journals.le.ac.uk/index.php/pst/article/view/969
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Section
Articles